NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver
Absolute Maximum Ratings: Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown V(BR)CES IC = 100A, VBE = 0 Voltage Collector-Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10A, IC = 0 ICBO ICES IEBO VCB = 80V, IE = 0 VCE = 80V, VBE = 0 VBE = 10V, IC = 0 100 100 12 - - - - - - - - - - - - 100 500 100 V V V nA nA nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cobo IC = 10mA, VCE = 5V, f = 100MHz, Note 2 VCB = 10V, IE = 0, f = 100kHz 125 - 200 5.0 - 8.0 MHz pF hFE VCE(sat) VBE(on) IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V IC = 10mA, IB = 0.01mA IC = 100mA, IB = 0.1mA IC = 100mA, VCE = 5V 10,000 10,000 - - - - - 0.7 0.8 1.4 - - 1.2 1.5 2.0 V V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2% Note 2. fT = hfe ftest
.135 (3.45) Min .210 (5.33) Max C B .500 (12.7) Min .021 (.445) Dia Max
Seating Plane
E
EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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